2SD1222 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) (darlington) 2SD1222 switching applications hammer drive, pulse motor drive applications power amplifier applications high dc current gain: h fe = 2000 (min) (v ce = 2 v, i c = 1 a) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 2 a) complementary to 2sb907. maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5 v collector current i c 3 a base current i b 0.3 a ta = 25c 1.0 collector power dissipation tc = 25c p c 15 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.) base emitter 4.8 k ? 300 ? collector
2SD1222 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 60 v, i e = 0 D D 20 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 2.5 ma collector-emitter breakdown voltage v (br) ceo i c = 25 ma, i b = 0 40 D D v h fe (1) v ce = 2 v, i c = 1 a 2000 D D dc current gain h fe (2) v ce = 2 v, i c = 3 a 1000 D D collector-emitter saturation voltage v ce (sat) i c = 2 a, i b = 4 ma D D 1.5 v base-emitter saturation voltage v be (sat) i c = 2 a, i b = 4 ma D D 2.0 v turn-on time t on D 0.1 D storage time t stg D 1.0 D switching time fall time t f i b1 = ? i b2 = 6 ma, duty cycle 1% D 0.2 D s marking explanation of lot no. d1222 product no. lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture v cc 30 v 20 s input i b1 i b2 output i b1 10 ? i b2
2SD1222 2002-07-23 3 i c ? v ce i c ? v ce i c ? v ce i c ? v be collector-emitter voltage v ce (v) collector current i c (a) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) base-emitter voltage v be (v) dc current gain h fe collector current i c (a) collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) 1 2 3 4 1 2 3 0 0 5 4 common emitter tc = 25c i b = 175 a 275 200 300 250 225 0 1 2 3 4 1 2 3 0 0 5 4 common emitter tc = ? 55c i b = 300 a 500 600 400 0 1 2 3 4 1 2 3 0 0 5 4 common emitter tc = 100c i b = 100 a 175 200 150 125 0 0.8 1.6 2.4 3.2 1 2 3 0 0 4.0 4 common emitter v ce = 2 v tc = 100c ? 55 25 v ce (sat) ? i c h fe ? i c common emitter v ce = 2 v 300 0.1 10000 500 1000 3000 5000 0.3 1 10 3 tc = 100c ? 55 25 0.5 0.2 common emitter i c /i b = 500 0.5 1 3 5 3 1 tc = ? 55c 100 25 5
2SD1222 2002-07-23 4 v be (sat) ? i c ambient temperature ta (c) p c ? ta collector power dissipation p c (w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector current i c (a) base-emitter saturation voltage v be (sat) (v) 0 0 200 240 120 160 80 8 4 16 12 (1) tc = ta infinite heat sink (2) ceramic substrate 50 50 0.8 mm (3) no heat sink (1) (2) (3) 40 10 0.5 0.1 common emitter i c /i b = 500 0.3 1 3 5 3 1 tc = ? 55c 100 25 10 0.05 0 3 10 30 100 0.1 0.3 0.5 1 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* v ceo max 1 ms* 10 ms* dc operation tc = 25c 3 5
2SD1222 2002-07-23 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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